Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials

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This work presents the results of designing, constructing and testing the atomic layer deposition (ALD) platform for the synthesis of various semiconductor, dielectric, metallized and barrier thin-film structures with a thickness of < 100 nm. This ALD platform can be used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of 0.3 ng/cm2 and 0.037 Å/cycle, respectively. In this ALD platform, the number of imported components is minimized due to the use of electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make atomic layer deposition technology available to most scientific and educational organizations in Russia.

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Sobre autores

R. Amashaev

Institution of Higher Education "Dagestan State University"; ALD TECHNOLOGIES Limited Liability Company

Autor responsável pela correspondência
Email: rustam.amashaev@gmail.com
Rússia, Makhachkala; Makhachkala

Sh. Isubgadzhiev

Institution of Higher Education "Dagestan State University"; ALD COATING TECHNOLOGIES Limited Liability Company

Email: rustam.amashaev@gmail.com
Rússia, Makhachkala; Kilyatl

M. Rabadanov

Institution of Higher Education "Dagestan State University"

Email: rustam.amashaev@gmail.com
Rússia, Makhachkala

I. Abdulagatov

Institution of Higher Education "Dagestan State University"

Email: rustam.amashaev@gmail.com
Rússia, Makhachkala

Bibliografia

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2. Fig. 1. Digital model of the reactor (a), models of heat distribution along the planes when the heater temperature is set to 180 °C (b, c), isothermal distribution of the temperature of the outer walls of the reactor (d), temperature distribution at the base of the reactor (d), isothermal distribution of temperature in the cross-section (e)

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3. Fig. 2. Modeling the nature of nitrogen gas flow in a reactor (vacuum chamber) and determining the nitrogen flow rate in different areas

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4. Fig. 3. Modeling of nitrogen gas density distribution in the reactor

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5. Fig. 4. (a) Digital model of the atomic layer deposition technology platform, (b) side view of the prototype of the atomic layer deposition technology platform

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6. Fig. 5. Pressure surges in the software interface graph during the process of opening/closing pneumatic valves of the ASO technological platform

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7. Fig. 6. A prototype of the atomic layer deposition technology platform with an installed FS-1 ellipsometer. The inset illustrates the precise centering of the beam in the detector entrance.

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8. Fig. 7. (a) Linear graph of the increase in the Al2O3 film thickness, (b) mass increase for 6 cycles of Al(CH3)3 and H2O

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9. Fig. 8. Cross-section of Si grooves produced using Bosch technology and coated with SiC films (formed by pyrolysis of 122 nm thick polyamide MLD film at 1300 °C) [15]

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10. Fig. 9. SEM image of SiC on SOI substrate (a), distribution of elements C, Si, O (b, c, d)

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11. Fig. 10. Scanning electron microscopy image of a sample of copper film on a silicon surface with an intermediate aluminum oxide layer in the cleavage [21]

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