Switching processes in ferroactive solid solution 0.725NaNbO 3 –0.20KNbO 3 –0.075CdNb 2 O 6

M. O. Moysa; Мойса М. О.; M. V. Talanov; Таланов М. В.; K. P. Andryushin; Андрюшин К. П.; N. A. Shvetsova; Швецова Н. А.; I. A. Shvetsov; Швецов И. А.; A. N. Rybyanets; Рыбянец А. Н.

doi:10.31857/S0367676523702265

Switching processes in ferroactive solid solution 0.725NaNbO₃–0.20KNbO₃–0.075CdNb₂O₆

Авторлар: Moysa M.O.¹, Talanov M.V.¹, Andryushin K.P.¹, Shvetsova N.A.¹, Shvetsov I.A.¹, Rybyanets A.N.¹
Мекемелер:
1. Institute of Physics, Southern Federal University
Шығарылым: Том 87, № 9 (2023)
Беттер: 1285-1288
Бөлім: Articles
URL: https://transsyst.ru/0367-6765/article/view/654610
DOI: https://doi.org/10.31857/S0367676523702265
EDN: https://elibrary.ru/KBAEMI
ID: 654610

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Аннотация

The results of dielectric hysteresis loops and dielectric permittivity studying of 0.725NaNbO₃–0.20KNbO₃–0.075CdNb₂O₆ ceramics in strong (5–40 kV · cm^–1) and weak (0–0.3 kV · cm^–1) alternating electric field are presented. The parameters of the reversible and irreversible contributions to the dielectric permittivity are determined. Based on the Preisach model, a diagram of the density of domain switching is constructed. It is shown that the distribution function of domains over local coercive fields is characterized by a sharp peak, which indicates a high degree of homogeneity of the domain structure.

Әдебиет тізімі

Zhang S., Xia R., Shrout T.R. et al. // Solid State Commun. 2007. V. 141. No. 12. P. 675.
Wei H., Wang H., Xia Y. et al. // J. Mater. Chem. C. 2018. V. 6. P. 12446.
Wu J.G. Advances in lead-free piezoelectric materials. Singapore: Springer, 2018.
Lee M.H., Kim D.J., Park J.S. et al. // Adv. Mater. 2015. V. 27. P. 6976.
Papanikolaou N.C., Hatzidaki E.G., Belivanis S. et al. // Med. Sci. Monitor. 2005. V. 11. No. 10. P. RA329.
Marcus D.K., Fulton J.J., Clarke E.J. // J. Clin. Child Adolesc. Psychol. 2010. V. 39. No. 2. P. 234.
Mason L.H., Harp J.P., Han D.Y // BioMed Res. Int. 2014. V. 2014. Art. No. 840547.
Coondoo I., Panwar N., Kholkin A. // J. Adv. Dielectr. 2013. V. 3. No. 2. Art. No. 1330002.
Kim J., Ji J.-H., Shin D.-J., Koh J.-H. // Ceram. Int. 2018. V. 44. No. 18. P. 22219.
Egerton L., Dillon D.M. et al. // J. Amer. Ceram. Soc. 1959. V. 42. P. 438.
Moysa M.O., Andryushin K.P., Kubrin S.P. et al. // J. Phys. Conf. Ser. 2021. V. 1942. No. 117. Art. No. 012027.
Andryushin K., Shilkina L., Andryushina I. et al. // Materials. 2021. V. 14. No. 14. Art. No. 4009.
Турик А.В. // ФТТ. 1963. Т. 5. № 10. С. 2922.
Taylor D.V., Damjanovic D. // J. Appl. Phys. 1997. V. 82. P. 1973.
Cima L., Laboure E., Muralt P. // Rev. Sci. Instrum. 2002. V. 73. No. 10. P. 3546.
Fujii I., Hong E., Trolier-McKinstry S. // IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 2010. V. 57. No. 8. P. 1717.
Tsuji K., Fan Z. Bang S., Dursun S. et al. // J. Eur. Ceram. Soc. 2022. V. 42. No. 1. P. 105.
Piazza D., Stoleriu L., Mitoseriu L. et al. // J. Eur. Ceram. Soc. 2006. V. 26. No. 14. P. 2959.