Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb1 – xGdxTe under the influence of electron paramagnetic resonance processes of Gd3+ ions

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Аннотация

In crystals of the narrow-gap semiconductor Pb1 – xGdxTe (x = 1.5 · 10–4) at temperatures T = 5–100 K, the method of electron paramagnetic resonance (EPR) revealed unusual dependences of the line shape of the EPR spectra of paramagnetic Gd3+ centers on temperature and the microwave power level in the spectrometer cavity. Based on the results of the analysis of the shape parameters of resonance lines recorded in the X-band, it was concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd3+ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd3+ ions.

Авторлар туралы

V. Ulanov

Kazan State Power Engineering University; Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”

Хат алмасуға жауапты Автор.
Email: rrza7@yandex.ru
Russia, 420066, Kazan; Russia, 420029, Kazan

R. Zainullin

Kazan State Power Engineering University

Хат алмасуға жауапты Автор.
Email: rrza7@yandex.ru
Russia, 420066, Kazan

I. Yatsyk

Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”

Email: rrza7@yandex.ru
Russia, 420029, Kazan

I. Fazlizhanov

Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”

Email: rrza7@yandex.ru
Russia, 420029, Kazan

Әдебиет тізімі

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© В.А. Уланов, Р.Р. Зайнуллин, И.В. Яцык, И.И. Фазлижанов, 2023