Compressibility, Metallization, and Relaxation in Nonstoichiometric Chalcogenide Glass g-As3Te2 at High Hydrostatic Pressure versus “Classic” g-As2Te3 Glass
- 作者: Tsiok O.B1, Brazhkin V.V1, Bychkov E.V2, Tver'yanovich A.S3
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隶属关系:
- Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences
- LPCA, UMR 8101 CNRS, Universite du Littoral
- St. Petersburg State University, Institute of Chemistry
- 期: 卷 163, 编号 4 (2023)
- 页面: 585-596
- 栏目: Articles
- URL: https://transsyst.ru/0044-4510/article/view/653537
- DOI: https://doi.org/10.31857/S0044451023040156
- EDN: https://elibrary.ru/MKIIGE
- ID: 653537
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详细
The volume and conductivity of nonstoichiometric chalcogenide glass g-As3Te2 have been investigated at high hydrostatic pressures (up to 8.5 GPa), and results have been compared with earlier data for stoichiometric chalcogenide glass g-As2Te3. Structural and Raman studies of g-As3Te2 glass have revealed a greater significance of As–As pair correlations in the range of medium-range order compared with “classic” chalcogenide glass g-As2Te3. Even at such a large excess of arsenic, a high concentration of “improper” Te–Te neighbors has been observed because of chemical disorder. Under normal conditions, the thermal gap (0.43–0.48 eV) and resistivity (>104 Ω cm) of glass g-As3Te2 are greater than those of g-As2Te3. The elastic behavior of g-As3Te2 glass, as well as of g-As2Te3, under compression has been observed at pressures up to 1 GPa, the initial values of bulk moduli for these glasses being nearly coincident. Polyamorphic transformation in g-As3Te2 (with softening of relaxing bulk modulus) is more diffuse and extends to higher pressures (from 1.5 to 4.0 GPa). The metallization process in g-As3Te2 is also more diffuse: metallic conductivity is reached at pressures of 5.5–6.0 GPa. As in the case of the stoichiometric glass, the baric dependences of the bulk modulus exhibit a kink in the pressure range 4–5 GPa. Up to maximal pressures, the volume and resistivity relax logarithmically in time with roughly the same rate as in the case of g-As2Te3. The residual densification of g-As3Te2 after pressure release is roughly twice as high as for g-As2Te3 and equals 3.5%, the conductivity of the compacted glass is about three orders of magnitude higher than that of the as-prepared sample. Under normal conditions, a considerable relaxation of the volume and resistivity has been observed. As for densified g-GeS2 glass, the logarithmic kinetics of this relaxation has been successfully described in terms of our earlier model based on the concept of relaxation self-organized criticality with the activation energy (1.3 eV) remaining unchanged up to 5 × 106 s.
作者简介
O. Tsiok
Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences
Email: tsiok@hppi.troitsk.ru
108840, Troitsk, Moscow, Russia
V. Brazhkin
Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences
Email: brazhkin@hppi.troitsk.ru
108840, Troitsk, Moscow, Russia
E. Bychkov
LPCA, UMR 8101 CNRS, Universite du Littoral
Email: tsiok@hppi.troitsk.ru
59140, Dunkerque, France
A. Tver'yanovich
St. Petersburg State University, Institute of Chemistry
编辑信件的主要联系方式.
Email: tsiok@hppi.troitsk.ru
198504, St. Petersburg, Russia
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