作者的详细信息
Здоровейщев, А. В.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 3 (2024) | ПРИБОРЫ | Development of the Ge-MDST instrument structure with an induced p-type channel |
用户
订阅
登录验证订阅
关键字
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
最新一期
卷 53, 编号 6 (2024)
×
用户
订阅
登录验证订阅
关键字
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
最新一期